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Structural analysis(se) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Sep 03, 2025～Sep 30, 2025
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Structural analysis Product List

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Structural analysis of prismatic Li-ion batteries.

Structural analysis of prismatic Li-ion batteries.

Observation using optical microscopy and ultra-low acceleration FE-SEM! Detailed structural analysis and elemental analysis are possible.

By mechanically polishing commercially available rectangular Li-ion batteries and observing them with optical microscopy and ultra-low acceleration FE-SEM, detailed structural analysis and elemental analysis can be performed. The materials introduce the overall structure of the Li-ion battery and detailed structural observations of the Li-ion battery using SEM and ultra-low acceleration FE-SEM through photographs. [Analysis Overview] ■ Overall structure of the Li-ion battery and SEM observation ■ Detailed structural observation of the Li-ion battery using ultra-low acceleration FE-SEM *For more details, please refer to the PDF materials or feel free to contact us.

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  • Analysis Services
  • Other contract services

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Structural analysis of nanomaterials

Structural analysis of nanomaterials

We offer contract services for structural analysis and morphological observation at the nanoscale.

We offer contract services for structural analysis and morphological observation of nanomaterials such as nanotubes using TEM, SEM, and EDS in the nanoscale region.

  • Contract measurement

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Technical Information Magazine 201904-02 Cellulose Nanofiber Structural Analysis

Technical Information Magazine 201904-02 Cellulose Nanofiber Structural Analysis

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** In the research and development of CNF, the use of electron microscopy for observation has become a necessary evaluation across almost all material fields and research phases. Particularly for observing CNF dispersed in polymers using TEM, it is essential to employ the technique of "electron staining," which has been crucial for preparing TEM samples of polymer materials. In this presentation, we will introduce examples of morphological observations of composite materials using CNF, as well as observation cases of the CNF itself, structural analysis examples such as crystallinity measured by 13C solid-state NMR, and examples of compositional sugar analysis using acid hydrolysis HPLC-fluorescence detection. **Table of Contents** 1. Introduction 2. Overview of Morphological Observation 3. Observation Cases of CNF and CNF/Polymer 4. Evaluation of CNF Crystallinity 5. Compositional Sugar Analysis of CNF (HPLC-Fluorescence Detection) 6. Conclusion

  • Contract Analysis
  • Contract measurement
  • Technical and Reference Books

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Analysis of defects in overseas manufactured displays.

Analysis of defects in overseas manufactured displays.

Numerous achievements in defect analysis! Detailed analysis is possible, from confirming phenomena to hypothesizing the mechanisms of defect occurrence.

Our company conducts "defect analysis of overseas manufactured displays." We can perform detailed analysis from confirming the phenomenon, hypothesizing the defect occurrence mechanism, to narrowing down the production processes that caused the issue. We carry out lighting observations, panel disassembly, and optical microscope observations tailored to the defect symptoms. If it is necessary to narrow down the defective areas and conduct detailed analysis, we will propose appropriate methods. 【Examples of detailed analysis (partial)】 ■ Cross-sectional observation of wiring ■ Foreign object analysis ■ Liquid crystal component analysis ■ Electrical characteristic measurement *Additional costs will be incurred. *For more details, please refer to the PDF document or feel free to contact us.

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  • LCD display

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Analysis of defective connector terminal contacts with Au plating【STEM/EDS】

Analysis of defective connector terminal contacts with Au plating【STEM/EDS】

It can be confirmed without loss by the "sampling method that protects the surface" of the adhered layer (approximately 20nm) on the surface of the connector terminal plated with STEM.

In STEM (Scanning Transmission Electron Microscopy) and EDS (Energy Dispersive X-ray Spectroscopy), information about the composition of the sample (contrast images reflecting atomic numbers) can be obtained by scanning a finely focused electron beam over the sample. The following features are also available: - Observation of changes in diffraction contrast by varying the angle of incidence of the electron beam - Determination of whether the observation target is crystalline - Acquisition of information about crystal defects (dislocations, twins, etc.) within the crystal In this case, we will introduce "Failure Analysis of Au-Plated Connector Terminal Contacts Using STEM." Please take a moment to read the PDF materials. Additionally, our company conducts various cross-sectional analyses using not only STEM but also TEM and SEM. We would be happy to assist you, so please feel free to reach out. Seiko Future Creation Official Website https://www.seiko-sfc.co.jp/ *Other materials are also available. If you request them through the inquiry button, we will send them to you.

  • Plating Equipment
  • Contract Analysis
  • Other metal materials

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Technical Information Magazine 202001-02 Crystal Structure Analysis of Gallium Oxide

Technical Information Magazine 202001-02 Crystal Structure Analysis of Gallium Oxide

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** Gallium oxide (Ga2O3) is attracting attention as a next-generation power semiconductor material, and research has been actively conducted in recent years. Optimizing process technology is essential for improving the reliability and characteristics of semiconductor devices, making the evaluation methods crucial. This paper presents examples of crystal structure analysis necessary for assessing the quality of epitaxial films, as well as the analysis of impurities, defects, and carrier concentration in the ion implantation process, which significantly impacts device characteristics. **Table of Contents** 1. Introduction 2. Crystal structure analysis using cross-sectional TEM and planar STEM 3. Evaluation of the ion implantation process 4. Conclusion

  • Contract Analysis
  • Contract measurement
  • Technical and Reference Books

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Technical Information Magazine 201901-02 Nanometer Scale Local Structure Analysis

Technical Information Magazine 201901-02 Nanometer Scale Local Structure Analysis

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** Spectroscopic analysis techniques utilizing near-field light localized at the tips of metal chips are highly anticipated methods for analyzing chemical structures in the nanometer range. Techniques such as tip-enhanced Raman spectroscopy and near-field Raman spectroscopy are representative methods, and various studies have been conducted on their principles and applications. This paper presents examples of their application in material analysis and discusses their practicality for material characterization. **Table of Contents** 1. Introduction 2. Crystal structure analysis of CNTs using TERS 3. Stress analysis at the SiO2/SiC interface using SNOM-Raman 4. Conclusion

  • Contract Analysis
  • Contract measurement
  • Technical and Reference Books

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[Structural Analysis Example] Coupled Problem 2 Using Particle Method (SPH)

[Structural Analysis Example] Coupled Problem 2 Using Particle Method (SPH)

The aircraft is composed of shell elements with actual collision intensity equivalent! Introducing examples in aviation.

We will introduce the analysis of aircraft water landing behavior. The airplane is composed of shell elements that have equivalent impact strength. The number of nodes is 143,242, and the number of elements is 144,223 (Shells 8,691, SPH 135,542). In the related links below, we present the analysis results in images, so please take a look. 【Case Overview】 ■ Water is represented by SPH elements ■ The airplane is composed of shell elements that have equivalent impact strength ■ Number of nodes: 143,242 Number of elements: 144,223 (Shells 8,691, SPH 135,542) ■ Analysis time: 4.0 seconds Computation time: 34 hours 22 minutes ■ PC CPU: Core 2 Duo 64 bits×2 3.33GHz used *For more details, please refer to the related links or feel free to contact us.

  • Structural Analysis

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[Next Generation Sequencing Analysis Case] 16S rRNA Amplicon Analysis

[Next Generation Sequencing Analysis Case] 16S rRNA Amplicon Analysis

Introducing the results of microbial community structure analysis, including principal coordinate analysis and rarefaction curves! *Case study collection available.

We would like to introduce our in-house data on soil samples. This data consists of the results of analyzing four samples from four locations. Approximately 100,000 reads have been obtained for each sample using MiSeq. The delivered data includes files in HTML format, and graphs can be viewed in a web browser, so please check them out via the related links. 【Overview】 ■ Results of microbial community structure analysis using the V4 region of 16S rRNA (classification at the phylum level) ■ OTU heatmap ■ Principal Coordinate Analysis (PCoA) *Optional ■ Rarefaction curve *Optional *For more details, please refer to the PDF materials or feel free to contact us.

  • Contract Analysis

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Defective analysis service

Defective analysis service

Introducing services that help improve product quality through various analytical methods and appropriate responses.

Our company provides detailed failure analysis services for various defects, including product samples from other companies. We conduct thorough investigations into the causes of defects using a wide range of analytical methods. By utilizing specialized material analysis techniques such as FTIR (Fourier Transform Infrared Spectroscopy), we can identify issues and defects related to the materials themselves. Additionally, we can utilize external facilities such as industrial testing laboratories as needed, allowing us to perform specialized analyses that cannot be handled by our in-house equipment. After discussing the details of your request and the condition of the product, we will focus our analysis on the areas where defects are most likely to occur. 【Service Examples】 ■ LED Product Analysis ■ Wire Bond Joint Analysis *For more details, please refer to the PDF document or feel free to contact us.

  • Analysis Services
  • Contract Analysis
  • Other analyses

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IC failure analysis

IC failure analysis

By combining various methods suitable for failure modes, we can consistently address everything from the identification of defective nodes to physical analysis.

We would like to introduce Aites Inc.'s "Defect Analysis of ICs." Our company provides a comprehensive approach to ICs by combining methods suitable for various defect modes, from identifying defective nodes to physical analysis. We offer various analysis techniques, including "Light Emission Analysis/OBIRCH Analysis," which allows layout verification using a Layout Viewer, as well as "Layer Delamination/Sample Processing," "PVC Analysis," "Diffusion Layer Etching," and "sMIM Analysis." 【Methods】 ■ Light Emission Analysis/OBIRCH Analysis ■ Layer Delamination/Sample Processing ■ Microprobe ■ PVC Analysis ■ EBAC Analysis ■ Physical Analysis (FIB-SEM, TEM) *For more details, please refer to the PDF document or feel free to contact us.

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  • Other analyses
  • Contract Analysis
  • Analysis Services

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Failure analysis of an orange LED damaged by electrostatic discharge.

Failure analysis of an orange LED damaged by electrostatic discharge.

We will introduce a comparison of brightness and characteristics between good products and ESD-damaged products, along with examples of luminescence analysis using EMS microscopy!

We conduct failure analysis of orange LEDs that have been damaged by electrostatic discharge (ESD). LEDs that have been destroyed in ESD testing and show a decrease in luminous intensity can be analyzed using emission luminescence and the IR-OBIRCH method, allowing us to clarify the failure phenomena. We have examples such as "Comparison of brightness and characteristics between good products and ESD-damaged products" and "Luminescence analysis using emission microscopy." [Analysis Examples] ■ Comparison of brightness and characteristics between good products and ESD-damaged products - By polishing the lens part of a bullet-type LED to flatten it, dark areas were observed during brightness comparison. ■ Luminescence analysis using emission microscopy - In ESD-damaged products, dark areas were observed under forward bias, while only the damaged areas emitted light under reverse bias. ■ IR-OBIRCH and SEI analysis - Detailed damage locations were identified through IR-OBIRCH analysis of ESD-damaged products. *For more details, please refer to the PDF document or feel free to contact us.

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  • Analysis Services
  • Contract Analysis

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Panasonic ReRAM 8-bit microcontroller structural analysis

Panasonic ReRAM 8-bit microcontroller structural analysis

Panasonic ReRAM-equipped MN101LR05D 8-bit microcontroller

The MN101LR05D is a low-power 8-bit single-chip microcontroller developed for portable healthcare, security devices, and sensor processing. The MN101LR05D features a CPU core with a 10MHz 8-bit AM13L, 64KB of ReRAM capacity, and 4KB of SRAM capacity. The MR101LR05D is the world's first mass-produced practical example of ReRAM (Resistive RAM), and it is expected to be widely utilized as a successor technology to existing non-volatile memory. The MN101LR05D is manufactured using a 180nm CMOS process with four layers of AI metallization. The ReRAM cell of this metal oxide is formed between stack W vias connecting metal 3 to metal 4. The results of the report are based on data from scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy-dispersive X-ray analysis (TEM-EDS), electron energy loss spectroscopy (TEM-EEKS), and spreading resistance measurement (SRP).

  • Other electronic parts

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100V GaN transistor structure analysis, process analysis report

100V GaN transistor structure analysis, process analysis report

Structural and process analysis of GaN Systems' GaN power transistor "GS61008T-E01-MR"!

We provide the "Structural Analysis and Process Analysis Report for GaN Systems 100V GaN Transistor (GS61008T-E01-MR)." The structural analysis report clarifies the details of the GaN power transistor "GS61008T-E01-MR" from GaN Systems, while the process flow analysis report estimates the chip manufacturing process based on the results of the structural analysis. [Report Contents] ■ Structural Analysis Report - Package appearance, X-ray observation, chip plane analysis (wire connections, layout confirmation), chip cross-section analysis (GaN transistor, chip edge), GaN-Epi layer TEM-EDX analysis - Electrical characteristic measurements (Id-Vd, BVdss, capacitance characteristics) ■ Process Analysis Report - Extraction and estimation of manufacturing process flow, number of masks, process sequence cross-sectional diagram - Correlation analysis between electrical characteristics and device structure *For more details, please download the PDF or feel free to contact us.

  • Other services

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Evaluation of semiconductor insulating films using STEM/EDS.

Evaluation of semiconductor insulating films using STEM/EDS.

STEM-EDS observation can confirm the shape and layer structure of the insulating film between semiconductor Poly-Si (polysilicon) and can be applied to investigate the causes of semiconductor defects.

In STEM (Scanning Transmission Electron Microscopy) and EDS (Energy Dispersive X-ray Spectroscopy), information regarding the composition of the sample (contrast images reflecting atomic numbers) can be obtained by scanning a finely focused electron beam over the sample. Additionally, the following features are available: - Observation of changes in diffraction contrast by varying the angle of incidence of the electron beam - Determination of whether the observation target is crystalline - Acquisition of information on crystal defects (dislocations, twins, etc.) within the crystal In this case, we introduce "Evaluation of Semiconductor Insulating Films using STEM-EDS." This case yielded no issues, but abnormal detection is also possible. Please take a moment to read the PDF materials. Furthermore, in addition to this STEM, our company excels in identifying defective areas by performing 3D reconstruction on specific regions of the sample in combination with FIB. We would be happy to provide a demonstration, so please feel free to reach out to us. Seiko Future Creation Official Website https://www.seiko-sfc.co.jp/ *Other materials are also available. If you request them through the inquiry button, we will send them to you.

  • Semiconductor inspection/test equipment
  • Contract Analysis
  • Other semiconductors

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